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2SC458 (LG), 2SC2310
Silicon NPN Epitaxial
ADE-208-1044A (Z) 2nd. Edition Mar. 2001 Application
* Low frequency low noise amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SC458 (LG), 2SC2310
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC458 (LG) 30 30 5 100 -100 200 150 -55 to +150 2SC2310 55 50 5 100 -100 200 150 -55 to +150 Unit V V V mA mA mW C C
2SC458 (LG), 2SC2310
Electrical Characteristics (Ta = 25C)
2SC458 (LG) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO
1
2SC2310 Max -- -- -- 0.5 0.5 500 0.2 0.75 -- 3.5 5 -- -- -- -- Min 55 50 5 -- -- 100 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- 0.67 230 1.8 3 16.5 70 130 11.0 Max -- -- -- 0.5 0.5 320 0.2 0.75 -- 3.5 5 -- -- -- -- S V V MHz pF dB k x 10 -6 Unit V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB =18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 120 Hz, Rg = 500 VCE = 5V, IC = 0.1mA, f = 270 Hz
Min 30 30 5 -- -- 100 -- -- -- -- -- -- -- -- --
Typ -- -- -- -- -- -- -- 0.67 230 1.8 3 16.5 70 130 11.0
DC current transfer ratio hFE* Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Noise figure Small signal input impedance Small signal voltage feedback ratio Small signal current transfer ratio Small signal output admittance Note: B 2SC458 (LG) 100 to 200 2SC2310 100 to 200 Cob NF hie hre hfe hoe
1. The 2SC458 (LG) and 2SC2310 are grouped by hFE as follows. C 160 to 320 160 to 320 D 250 to 500 --
2SC458 (LG), 2SC2310
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC (mA) Typical Output Characteristics 10
P
60 50 40
C
=
20
0m
W
8
200
6
30
4
100
20 10 A IB = 0
2
0
50 100 150 Ambient Temperature Ta (C)
0
5 10 15 20 25 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics 5 Collector Current IC (mA) 4 VCE = 12 V DC Current Transfer Ratio hFE 300
DC Current Transfer Ratio vs. Collector Current VCE = 12 V
200
Ta =
75C
25
3
2
100
1
0
0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V)
1.0
0 0.03
0.1 0.3 1.0 3 10 Collector Current IC (mA)
30
2SC458 (LG), 2SC2310
Small Signal Current Transfer Ratio vs. Collector Current Small Signal Current Transfer Ratio hfe 300 Base to Emitter Voltage VBE (V) f = 270 Hz VCE = 12 V 200 0.9 0.8 VCE = 12 V IC = 2 mA Base to Emitter Voltage vs. Ambient Temperature
0.7
100
0.6
0.5
0 0.03
0.1
0.3
1.0
3
10
30
0.4 -20
Collector Current IC (mA)
0 20 40 60 Ambient Temperature Ta (C)
80
Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 5 4 IE = 0 f = 1 MHz Emitter Input Capacitance Cib (pF) 5
Emitter Input Capacitance vs. Emitter to Base Voltage IC = 0 f = 1 MHz 4
3
3
2
2
1
1
0
4 8 12 16 20 Collector to Base Voltage VCB (V)
0
2 4 6 8 Emitter to Base Voltage VEB (V)
10
2SC458 (LG), 2SC2310
Contours of Constant Noise Figure 10 Signal Source Resistance Rg (k) 5 2 1.0 0.5 0.2 Signal Source Resistance Rg (k) 14 12 10 NF = 1dB 2 6 3 4 6 VCE = 6 V f = 120 Hz 8 10 5 VCE = 6 V f = 1 kHz 2 1.0 0.5 0.2 NF = 0.5 dB 1.0 2 3 4 8 4 3 Contours of Constant Noise Figure
8 0.1 0.05 0.1 0.2 0.5 1.0 2.0 Collector Current IC (mA)
0.1 8 0.05 0.1 0.2 0.5 1.0 2.0 Collector Current IC (mA)
Contours of Constant Noise Figure 10 Signal Source Resistance Rg (k) 5 VCE = 6 V f = 10 kHz 2 4 2 1 Noise Figure NF (dB) 10
Noise Figure vs. Frequency IC = 0.1 mA Rg = 500 VCE = 6 V
8
NF
1.0 0.5
=0 .5 d B 1
2
6
4
0.2 0.1 0.05
2 4 0.1 0.2 0.5 1.0 2.0 Collector Current IC (mA) 0 30 100 300 1k 3k Frequency f (Hz) 10k 30k
2SC458 (LG), 2SC2310
Noise Figure vs. Collector to Emitter Voltage 8 IC = 0.1 mA Rg = 500 f = 120 Hz
Noise Figure NF (dB)
6
4
2
0 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 30
Percentage of Relative to IC = 0.1mA
20 VCE = 6 V 10 f = 270 Hz 5 hie 2 h 1.0 hfe re 0.5 hoe 0.2 0.1 0.05
Percentage of Relative to VCE = 5V
h Parameter vs. Collector Current 100 50
h Parameter vs. Collector to Emitter Voltage
1.8 IC = 0.1 mA f = 270 Hz 1.6 hre hoe
hoe
hre
1.4
hfe
1.2 hoe 1.0 hfe hie 0.8 0.5 hre hfe hie
hie
0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1.0 2 5 10 Collector Current IC (mA)
1.0 2 5 10 20 Collector to Emitter Voltage VCE (V)
2SC458 (LG), 2SC2310
Package Dimensions As of January, 2001
Unit: mm
4.8 0.4
3.8 0.4
2.3 Max 0.55Max 0.7 0.60 Max
12.7 Min
5.0 0.2
0.5Max
1.27 2.54
Hitachi Code JEDEC EIAJ Mass (reference value)
TO-92 (1) Conforms Conforms 0.25 g
2SC458 (LG), 2SC2310
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
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URL
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For further information write to:
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Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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